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FDMS7578 - N-Channel MOSFET

General Description

Max rDS(on) = 5.8 mΩ at VGS = 10 V, ID = 17 A Max rDS(on) = 8 mΩ at VGS = 4.5 V, ID = 14 A Advanced Package and Silicon combination for low rDS(on) and high efficiency Next generation enhanced body diode technology, engineered for soft recovery MSL1

Key Features

  • General.

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FDMS7578 N-Channel Power Trench® MOSFET October 2014 FDMS7578 N-Channel Power Trench® MOSFET 25 V,60 A, 5.8 mΩ Features General Description „ Max rDS(on) = 5.8 mΩ at VGS = 10 V, ID = 17 A „ Max rDS(on) = 8 mΩ at VGS = 4.5 V, ID = 14 A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency „ Next generation enhanced body diode technology, engineered for soft recovery „ MSL1 robust package design This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.