Datasheet Summary
FDMS7578 N-Channel Power Trench® MOSFET
October 2014
N-Channel Power Trench® MOSFET
25 V,60 A, 5.8 mΩ
Features
General Description
- Max rDS(on) = 5.8 mΩ at VGS = 10 V, ID = 17 A
- Max rDS(on) = 8 mΩ at VGS = 4.5 V, ID = 14 A
- Advanced Package and Silicon bination for low rDS(on) and high efficiency
- Next generation enhanced body diode technology, engineered for soft recovery
- MSL1 robust package design
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on),...