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FDMS7660AS - N-Channel MOSFET

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Description

Max rDS(on) = 2.4 mΩ at VGS = 10 V, ID = 25 A Max rDS(on) = 2.6 mΩ at VGS = 7 V, ID = 23 A Advanced Package and Silicon combination for low rDS(on) and high efficiency SyncFET Schottky Body Diode MSL1 robust package design 100% UIL tested

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Datasheet Details

Part number FDMS7660AS
Manufacturer Fairchild Semiconductor
File Size 423.90 KB
Description N-Channel MOSFET
Datasheet download datasheet FDMS7660AS Datasheet
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FDMS7660AS N-Channel PowerTrench® SyncFETTM September 2009 FDMS7660AS N-Channel PowerTrench® SyncFETTM 30 V, 42 A, 2.4 mΩ Features General Description „ Max rDS(on) = 2.4 mΩ at VGS = 10 V, ID = 25 A „ Max rDS(on) = 2.6 mΩ at VGS = 7 V, ID = 23 A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency „ SyncFET Schottky Body Diode „ MSL1 robust package design „ 100% UIL tested „ RoHS Compliant The FDMS7660AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
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