FEATURES
GENERAL DESCRIPTION
Max rDS(on) = 4.0 mΩ at VGS = 10 V, ID = 18 A Max rDS(on) = 4.5 mΩ at VGS = 7 V, ID = 16 A Advanced Package and Silicon combination for low rDS(on) and high efficiency SyncFET Schottky Body Diode MSL1 robust package design 100% UIL tested RoHS Compliant Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. APPLICATIONS
Synchronous Rectifier for DC/DC Converters Notebook Vcore/ GPU low side switch Networking Point of Load low side switch Telecom secondary side rectification Top Bottom Pin 1 S D5 4G S S G D6 3S Power 56 D D DD D7 D8 2S 1S MOSFET MAXIMUM RATINGS
TA = 25 °C unless otherwise noted Symbol VDS VGS ID dv/dt EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) -Continuous (Silicon limited) -Continuous -Pulsed TC = 25 °C TC = 25 °C TA = 25 °C MOSFET dv/dt Single Pulse A...
Fairchild Semiconductor
