FDMS7672AS Datasheet | Fairchild Semiconductor

FDMS7672AS N-Channel Power Trench® Sync FETTM October 2014 N-Channel Power Trench® Sync FETTM 30 V, 42 A, 4 mΩ Features General Description - Max r DS(on) = 4.0 mΩ at VGS = 10 V, ID = 18 A - Max r DS(on) = 4.5 mΩ at VGS = 7 V, ID = 16 A - Advanced Package and Silicon bination for low r DS(on) and high efficiency - Sync FET Schottky Body Diode - MSL1 robust package design - 100% UIL tested - Ro HS pliant The FDMS7672AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been bined to offer the lowest r DS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode. Applications - Synchronous Rectifier for DC/DC Converters - Notebook Vcore/ GPU low side switch - Networking Point of Load low side switch - Tele secondary side rectification Top Bottom Pin 1 D5 4G D6 3S Power 56 D D DD D7 D8 2S...