VBsemi Electronics FDMS7672AS
N-Channel MOSFET
| Part No. | FDMS7672AS |
|---|---|
| Datasheet | FDMS7672AS Download |
| Manufacturer | VBsemi Electronics |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● TrenchFET® Power MOSFET● 100 % Rg and UIS Tested
APPLICATIONS
● Notebook PC Core● VRM/POL Top View DFN5X6 Bottom View PIN1 Top View 1 8 2 7 3 6 4 5 D G S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 175 °C) TC = 70 °C ID TA = 25 °C TA = 70 °C Pulsed Drain Current IDM Avalanche Current Pulse Single Pulse Avalanche Energy IAS L = 0.1 mH EAS Continuous Source-Drain Diode Current TC = 25 °C IS TA = 25 °C TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C PD TA = 70 °C Operating Junction and Storage Temperature Range TJ, Tstg Limit 30 ± 20 120a, e 90e 21b, c 20.8b, c 250 56 60 80a, e 76b, c 210a 155 35b, c 13b, c - 55 to 175 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d t 10 s Symbol RthJA Maximum Junction-to-Case Steady State RthJC Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d.
