FDMS7680 Description
Max rDS(on) = 6.9 mΩ at VGS = 10 V, ID = 14 A Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A Advanced Package and Silicon bination for low rDS(on) and high efficiency Next generation enhanced body diode technology, engineered for soft recovery. This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous...
FDMS7680 Key Features
- Max rDS(on) = 6.9 mΩ at VGS = 10 V, ID = 14 A
- Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A
- Advanced Package and Silicon bination for low rDS(on)
- Next generation enhanced body diode technology, engineered for soft recovery