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FDMS7680 - N-Channel MOSFET

General Description

Max rDS(on) = 6.9 mΩ at VGS = 10 V, ID = 14 A Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A Advanced Package and Silicon combination for low rDS(on) and high efficiency

Next generation enhanced body diode technology, engineered for soft recovery.

Key Features

  • General.

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FDMS7680 N-Channel PowerTrench® MOSFET October 2014 FDMS7680 N-Channel PowerTrench® MOSFET 30 V, 6.9 mΩ Features General Description „ Max rDS(on) = 6.9 mΩ at VGS = 10 V, ID = 14 A „ Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency „ Next generation enhanced body diode technology, engineered for soft recovery. This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.