FDMS7680 Datasheet | Fairchild Semiconductor

FDMS7680 N-Channel Power Trench® MOSFET October 2014 N-Channel Power Trench® MOSFET 30 V, 6.9 mΩ Features General Description - Max r DS(on) = 6.9 mΩ at VGS = 10 V, ID = 14 A - Max r DS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A - Advanced Package and Silicon bination for low r DS(on) and high efficiency - Next generation enhanced body diode technology, engineered for soft recovery. This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low r DS(on), fast switching speed and body diode reverse recovery performance. Applications - MSL1 robust package design - 100% UIL tested - Ro HS pliant - IMVP Vcore Switching for Notebook - VRM Vcore Switching for Desktop and Server - Oring FET / Load Switch - DC-DC Conversion Top Bottom Pin 1 S Power 56 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) -Continuous (Silicon limited) -Continuous...