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FDMS8570S - MOSFET

Description

This N-Channel SyncFETTM is produced using Fairchild Semiconductor’s advanced PowerTrench® process.

Features

  • Max rDS(on) = 2.8 mΩ at VGS = 10 V, ID = 24 A.
  • Max rDS(on) = 3.1 mΩ at VGS = 4.5 V, ID = 22 A.
  • High performance technology for extremely low rDS(on).
  • SyncFETTM Schottky Body Diode.
  • RoHS Compliant General.

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Full PDF Text Transcription

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FDMS8570S N-Channel PowerTrench® SyncFETTM FDMS8570S N-Channel PowerTrench® SyncFETTM November 2014 25 V, 60 A, 2.8 mΩ Features „ Max rDS(on) = 2.8 mΩ at VGS = 10 V, ID = 24 A „ Max rDS(on) = 3.1 mΩ at VGS = 4.5 V, ID = 22 A „ High performance technology for extremely low rDS(on) „ SyncFETTM Schottky Body Diode „ RoHS Compliant General Description This N-Channel SyncFETTM is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-toAmbient thermal resistance. This device has the added benefit of an efficient monolithic Schottky body diode.
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