FDMS8570S Overview
This N-Channel SyncFETTM is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and package technologies have been bined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-toAmbient . This device has the added benefit of an efficient monolithic Schottky body diode.
FDMS8570S Key Features
- Max rDS(on) = 2.8 mΩ at VGS = 10 V, ID = 24 A
- Max rDS(on) = 3.1 mΩ at VGS = 4.5 V, ID = 22 A
- High performance technology for extremely low rDS(on)
- SyncFETTM Schottky Body Diode
- RoHS pliant