Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed ang body diod
Features
- Max rDS(on) = 1.8 mΩ at VGS = 10 V, ID = 30 A.
- Max rDS(on) = 2.4 mΩ at VGS = 4.5 V, ID = 26 A.
- Advanced Package and Silicon Combination for Low rDS(on)
and High Efficiency.
- Next Generation Enhanced Body Diode Technology, Engineered for Soft Recovery.
- MSL1 Robust Package Design.
- 100% UIL Tested.
- RoHS Compliant
General.
FDMS8018 Datasheet
