Datasheet Summary
FDMS8018 N-Channel PowerTrench® MOSFET
December 2015
N-Channel PowerTrench® MOSFET
30 V, 175 A, 1.8 mΩ
Features
- Max rDS(on) = 1.8 mΩ at VGS = 10 V, ID = 30 A
- Max rDS(on) = 2.4 mΩ at VGS = 4.5 V, ID = 26 A
- Advanced Package and Silicon bination for Low rDS(on) and High Efficiency
- Next Generation Enhanced Body Diode Technology, Engineered for Soft Recovery
- MSL1 Robust Package Design
- 100% UIL Tested
- RoHS pliant
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized...