Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed ang body diod
Features
- Max rDS(on) = 2.5 mΩ at VGS = 10 V, ID = 26 A.
- Max rDS(on) = 3.6 mΩ at VGS = 4.5 V, ID = 21.5 A.
- Advanced Package and Silicon combination for low rDS(on)
and high efficiency.
- Next generation enhanced body diode technology, engineered for soft recovery.
- MSL1 robust package design.
- 100% UIL tested.
- RoHS Compliant
May 2015
General.
FDMS8020 Datasheet
