FDMS8020
Overview
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM has been optimized for low gate charge, low rDS(on), fast switching speed ang body diode reverse recovery performance.
- Max rDS(on) = 2.5 mΩ at VGS = 10 V, ID = 26 A
- Max rDS(on) = 3.6 mΩ at VGS = 4.5 V, ID = 21.5 A
- Advanced Package and Silicon combination for low rDS(on) and high efficiency
- Next generation enhanced body diode technology, engineered for soft recovery
- MSL1 robust package design
- 100% UIL tested
- RoHS Compliant May 2015
