FDMS8027S Description
Max rDS(on) = 5.0 mΩ at VGS = 10 V, ID = 18 A Max rDS(on) = 6.2 mΩ at VGS = 4.5 V, ID = 16 A Advanced Package and Silicon bination for low rDS(on) and high efficiency SyncFET Schottky Body Diode MSL1 robust package design 100% UIL tested RoHS pliant The FDMS8027S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been bined...
FDMS8027S Key Features
- Max rDS(on) = 5.0 mΩ at VGS = 10 V, ID = 18 A
- Max rDS(on) = 6.2 mΩ at VGS = 4.5 V, ID = 16 A
- Advanced Package and Silicon bination for low rDS(on)
- SyncFET Schottky Body Diode
- MSL1 robust package design
- 100% UIL tested
- RoHS pliant