FDMS8025S
Overview
Max rDS(on) = 2.8 mΩ at VGS = 10 V, ID = 24 A Max rDS(on) = 3.5 mΩ at VGS = 4.5 V, ID = 21 A Advanced package and silicon combination for low rDS(on) and high efficiency SyncFET Schottky Body Diode MSL1 robust package design 100% UIL tested RoHS Compliant The FDMS8025S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching device has the added benefit of an efficient monolithic Schottky body diode.
