FDMS8025S Description
Max rDS(on) = 2.8 mΩ at VGS = 10 V, ID = 24 A Max rDS(on) = 3.5 mΩ at VGS = 4.5 V, ID = 21 A Advanced package and silicon bination for low rDS(on) and high efficiency SyncFET Schottky Body Diode MSL1 robust package design 100% UIL tested RoHS pliant The FDMS8025S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been bined...
FDMS8025S Key Features
- Max rDS(on) = 2.8 mΩ at VGS = 10 V, ID = 24 A
- Max rDS(on) = 3.5 mΩ at VGS = 4.5 V, ID = 21 A
- Advanced package and silicon bination for low rDS(on) and
- SyncFET Schottky Body Diode
- MSL1 robust package design
- 100% UIL tested
- RoHS pliant