FDMS8023S Description
Max rDS(on) = 2.4 mΩ at VGS = 10 V, ID = 26 A Max rDS(on) = 3.0 mΩ at VGS = 4.5 V, ID = 23 A Advanced package and silicon bination for low rDS(on) and high efficiency SyncFET Schottky Body Diode MSL1 robust package design 100% UIL tested RoHS pliant The FDMS8023S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been bined...
FDMS8023S Key Features
- Max rDS(on) = 2.4 mΩ at VGS = 10 V, ID = 26 A
- Max rDS(on) = 3.0 mΩ at VGS = 4.5 V, ID = 23 A
- Advanced package and silicon bination for low rDS(on) and
- SyncFET Schottky Body Diode
- MSL1 robust package design
- 100% UIL tested
- RoHS pliant