FDMS86181
FDMS86181 is N-Channel Shielded Gate PowerTrench MOSFET manufactured by Fairchild Semiconductor.
Features
- Shielded Gate MOSFET Technology
- Max r DS(on) = 4.2 mΩ at VGS = 10 V, ID = 44 A
- Max r DS(on) = 12 mΩ at VGS = 6 V, ID = 22 A
- ADD
- 50% lower Qrr than other MOSFET suppliers
- Lowers switching noise/EMI
- MSL1 robust package design
- 100% UIL tested
- Ro HS pliant
General Description
This N-Channel MV MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that incorporates Shielded Gate technology. This process has been optimized to minimise on-state resistance and yet maintain superior switching performance with best in class soft body diode.
Applications
- Primary DC-DC MOSFET
- Synchronous Rectifier in DC-DC and AC-DC
- Motor Drive
- Solar
Top Pin 1
Bottom
Pin 1
Power 56
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol VDS VGS
EAS PD TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous -Continuous -Continuous -Pulsed
TC = 25 °C TC = 100 °C TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature...
