FDMS86181
FDMS86181 is N-Channel MOSFET manufactured by onsemi.
Description This N- Channel MV MOSFET is produced using onsemi’s advanced POWERTRENCH® process that incorporates Shielded Gate technology. This process has been optimized to minimise on- state resistance and yet maintain superior switching performance with best in class soft body diode.
Features
- Shielded Gate MOSFET Technology
- Max r DS(on) = 4.2 m W at VGS = 10 V, ID = 44 A
- Max r DS(on) = 12 m W at VGS = 6 V, ID = 22 A
- ADD
- 50% lower Qrr than other MOSFET suppliers
- Lowers switching noise/EMI
- MSL1 robust package design
- 100% UIL tested
- Ro HS pliant
Applications
- Primary DC- DC MOSFET
- Synchronous Rectifier in DC- DC and AC- DC
- Motor Drive
- Solar
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
Parameter
Value Unit
VDS Drain to Source Voltage
VGS Gate to Source Voltage
Drain Current:
- Continuous TC = 25°C (Note 5)
- Continuous TC = 100°C (Note 5)
- Continuous TA = 25°C (Note 1a)
- Pulsed (Note 4)
±20
A 124 78 17 510
EAS Single Pulse Avalanche Energy (Note...
