Datasheet Details
| Part number | FDMS86181 |
|---|---|
| Manufacturer | onsemi |
| File Size | 482.80 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 FDMS86181 Datasheet
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General Description
This N
advanced POWERTRENCH® process that incorporates Shielded Gate technology.
state resistance and yet maintain superior switching performance with best in class soft body diode.
Key Features
- Shielded Gate MOSFET Technology.
- Max rDS(on) = 4.2 mW at VGS = 10 V, ID = 44 A.
- Max rDS(on) = 12 mW at VGS = 6 V, ID = 22 A.
- ADD.
- 50% lower Qrr than other MOSFET suppliers.
- Lowers switching noise/EMI.
- MSL1 robust package design.
- 100% UIL tested.
- RoHS Compliant.