FDMS86350 Description
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
FDMS86350 Key Features
- Max rDS(on) = 2.4 mΩ at VGS = 10 V, ID = 25 A
- Max rDS(on) = 3.2 mΩ at VGS = 8 V, ID = 22 A
- Advanced Package and Silicon bination for low rDS(on) and high efficiency
- MSL1 robust package design
- 100% UIL tested
- RoHS pliant