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FDMS86350 - N-Channel MOSFET

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

Max rDS(on) = 2.4 mΩ at VGS = 10 V, ID = 25 A Max rDS(on) = 3.2

Key Features

  • General.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDMS86350 N-Channel PowerTrench® MOSFET April 2013 FDMS86350 N-Channel PowerTrench® MOSFET 80 V, 80 A, 2.4 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. „ Max rDS(on) = 2.4 mΩ at VGS = 10 V, ID = 25 A „ Max rDS(on) = 3.