FDMS86350 Description
This N−Channel MOSFET is produced using onsemi advanced POWERTRENCH® process that has been especially tailored to minimize the on−state resistance and yet maintain superior switching performance.
FDMS86350 Key Features
- Max RDS(on) = 2.4 mW at VGS = 10 V, ID = 25 A
- Max RDS(on) = 3.2 mW at VGS = 8 V, ID = 22 A
- Advanced Package and Silicon bination for Low RDS(on) and
- MSL1 Robust Package Design
- 100% UIL Tested
- RoHS pliant
- These Device is Halogen Free