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FDMS86350 - N-Channel MOSFET

General Description

This N Channel MOSFET is produced using onsemi advanced POWERTRENCH® process that has been especially tailored to minimize the on

state resistance and yet maintain superior switching performance.

Key Features

  • Max RDS(on) = 2.4 mW at VGS = 10 V, ID = 25 A.
  • Max RDS(on) = 3.2 mW at VGS = 8 V, ID = 22 A.
  • Advanced Package and Silicon Combination for Low RDS(on) and High Efficiency.
  • MSL1 Robust Package Design.
  • 100% UIL Tested.
  • RoHS Compliant.
  • These Device is Halogen Free.

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Datasheet Details

Part number FDMS86350
Manufacturer onsemi
File Size 408.90 KB
Description N-Channel MOSFET
Datasheet download datasheet FDMS86350 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – N-Channel, POWERTRENCH® 80 V, 130 A, 2.4 mW FDMS86350 Description This N−Channel MOSFET is produced using onsemi advanced POWERTRENCH® process that has been especially tailored to minimize the on−state resistance and yet maintain superior switching performance. Features • Max RDS(on) = 2.4 mW at VGS = 10 V, ID = 25 A • Max RDS(on) = 3.2 mW at VGS = 8 V, ID = 22 A • Advanced Package and Silicon Combination for Low RDS(on) and High Efficiency • MSL1 Robust Package Design • 100% UIL Tested • RoHS Compliant • These Device is Halogen Free Applications • Primary MOSFET • Synchronous Rectifier • Load Switch • Motor Control Switch DATA SHEET www.onsemi.com Pin 1 Pin 1 SSS G DDD D Top Bottom PQFN8 5X6, 1.