FDMS86350ET80 - MOSFET

Product Overview

Fairchild Semiconductor

Datasheet Details

Part number	FDMS86350ET80
Manufacturer	Fairchild Semiconductor
File Size	224.00 KB
Description	MOSFET
Datasheet	FDMS86350ET80 Datasheet
Additional preview pages of the FDMS86350ET80 datasheet.

Product details

Description

Extended TJ rating to 175°C Max rDS(on) = 2.4 mΩ at VGS = 10 V, ID = 25 A Max rDS(on) = 3.2 mΩ at VGS = 8 V, ID = 22 A Advanced Package and Silicon combination for low rDS(on) and high efficiency MSL1 robust package design 100% UIL tested RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet

Features

General.

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Published: Jan 10, 2017 |