FDMS86350ET80 Description
Extended TJ rating to 175°C Max rDS(on) = 2.4 mΩ at VGS = 10 V, ID = 25 A Max rDS(on) = 3.2 mΩ at VGS = 8 V, ID = 22 A Advanced Package and Silicon bination for low rDS(on) and high efficiency MSL1 robust package design 100% UIL tested RoHS pliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state...
FDMS86350ET80 Key Features
- Extended TJ rating to 175°C
- Max rDS(on) = 2.4 mΩ at VGS = 10 V, ID = 25 A
- Max rDS(on) = 3.2 mΩ at VGS = 8 V, ID = 22 A
- Advanced Package and Silicon bination for low rDS(on)
- MSL1 robust package design
- 100% UIL tested
- RoHS pliant