FDMS86350ET80
FDMS86350ET80 is manufactured by Fairchild Semiconductor.
FDMS86350ET80 N-Channel PowerTrench® MOSFET
January 2015
N-Channel PowerTrench® MOSFET
80 V, 198 A, 2.4 mΩ
Features
General Description
- Extended TJ rating to 175°C
- Max rDS(on) = 2.4 mΩ at VGS = 10 V, ID = 25 A
- Max rDS(on) = 3.2 mΩ at VGS = 8 V, ID = 22 A
- Advanced Package and Silicon bination for low rDS(on) and high efficiency
- MSL1 robust package design
- 100% UIL tested
- RoHS pliant
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Applications
- Primary MOSFET
- Synchronous Rectifier
-...
