Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.
Features
- Max rDS(on) = 11.7 mΩ at VGS = 10 V, ID = 10.5 A.
- Max rDS(on) = 15 mΩ at VGS = 8 V, ID = 8.5 A.
- Advanced Package and Silicon combination for low rDS(on)
and high efficiency.
- Next generation enhanced body diode technology, engineered for soft recovery.
- MSL1 robust package design.
- 100% UIL Tested.
- RoHS Compliant
General.
FDMS86320 Datasheet
