FDMS86320 Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.
FDMS86320 Key Features
- Max rDS(on) = 11.7 mΩ at VGS = 10 V, ID = 10.5 A
- Max rDS(on) = 15 mΩ at VGS = 8 V, ID = 8.5 A
- Advanced Package and Silicon bination for low rDS(on)
- Next generation enhanced body diode technology, engineered for soft recovery
- MSL1 robust package design
- 100% UIL Tested
- RoHS pliant