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FDMS86320 - N-Channel MOSFET

General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.

Key Features

  • Max rDS(on) = 11.7 mΩ at VGS = 10 V, ID = 10.5 A.
  • Max rDS(on) = 15 mΩ at VGS = 8 V, ID = 8.5 A.
  • Advanced Package and Silicon combination for low rDS(on) and high efficiency.
  • Next generation enhanced body diode technology, engineered for soft recovery.
  • MSL1 robust package design.
  • 100% UIL Tested.
  • RoHS Compliant General.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDMS86320 N-Channel PowerTrench® MOSFET October 2014 FDMS86320 N-Channel PowerTrench® MOSFET 80 V, 44 A, 11.7 mΩ Features „ Max rDS(on) = 11.7 mΩ at VGS = 10 V, ID = 10.5 A „ Max rDS(on) = 15 mΩ at VGS = 8 V, ID = 8.5 A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency „ Next generation enhanced body diode technology, engineered for soft recovery „ MSL1 robust package design „ 100% UIL Tested „ RoHS Compliant General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.