Datasheet Details
| Part number | FDMS86322 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 340.73 KB |
| Description | N-Channel MOSFET |
| Datasheet | FDMS86322_FairchildSemiconductor.pdf |
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Overview: FDMS86322 N-Channel Shielded Gate PowerTrench® MOSFET FDMS86322 N-Channel Shielded Gate PowerTrench® MOSFET 80 V, 60 A, 7.
| Part number | FDMS86322 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 340.73 KB |
| Description | N-Channel MOSFET |
| Datasheet | FDMS86322_FairchildSemiconductor.pdf |
|
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|
Shielded Gate MOSFET Technology Max rDS(on) = 7.65 mΩ at VGS = 10 V, ID = 13 A Max rDS(on) = 12 mΩ at VGS = 6 V, ID = 7.2 A Advanced Package and Silicon bination for low rDS(on) and high efficiency This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology.
This process has been optimized for the on-state resistance and yet maintain superior switching performance.
MSL1 robust package design 100% UIL tested RoHS pliant Application DC-DC Conversion Top Bottom Pin 1 S S S G Power 56 D D DD S S S G D D D D MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Continuous -Pulsed TC = 25 °C TA = 25 °C Single Pulse Avalanche Energy Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 1a) (Note 3) (Note 1a) Ratings 80 ±20 60 13 200 135 104 2.5 -55 to +150 Units V V A mJ W °C RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information (Note 1a) 1.2 50 °C/W Device Marking FDMS86322 Device FDMS86322 Package Power 56 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units ©2010 Fairchild Semiconductor Corporation FDMS86322 Rev.C3 1 .fairchildsemi.
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