FDMS86310 Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.
FDMS86310 Key Features
- Max rDS(on) = 4.8 mΩ at VGS = 10 V, ID = 17 A
- Max rDS(on) = 6.7 mΩ at VGS = 8 V, ID = 14 A
- Advanced Package and Silicon bination for low rDS(on)
- Next generation enhanced body diode technology, engineered for soft recovery
- MSL1 robust package design
- 100% UIL tested
- RoHS pliant