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FDN361AN - N-Channel MOSFET

General Description

This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

Key Features

  • 1.8 A, 30 V. RDS(on) = 0.100 Ω.
  • @ VGS = 10 V RDS(on) = 0.150 Ω @ VGS = 4.5 V. Low gate charge ( 2.1nC typical ). Fast switching speed. High performance trench technology for extremely low RDS(on). High power version of industry standard SOT-23 package. Identical pin out to SOT-23 with 30% higher power handling capability.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDN361AN April 1999 FDN361AN N-Channel, Logic Level, PowerTrenchΤΜ General Description This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Features • 1.8 A, 30 V. RDS(on) = 0.100 Ω • • • @ VGS = 10 V RDS(on) = 0.150 Ω @ VGS = 4.5 V. Low gate charge ( 2.1nC typical ). Fast switching speed. High performance trench technology for extremely low RDS(on). High power version of industry standard SOT-23 package. Identical pin out to SOT-23 with 30% higher power handling capability.