FDN361AN
Description
This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
Key Features
- 1.8 A, 30 V. RDS(on) = 0.100 Ω * *
- @ VGS = 10 V RDS(on) = 0.150 Ω @ VGS = 4.5 V. Low gate charge ( 2.1nC typical ). Fast switching speed. High performance trench technology for extremely low RDS(on). High power version of industry standard SOT-23 package. Identical pin out to SOT-23 with 30% higher power handling capability.
