Description
These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Features
- x 1.4 A, 30 V. RDS(ON) = 110 m: @ VGS = 10 V RDS(ON) = 160 m: @ VGS = 4.5 V
x Low gate charge
x Industry standard outline SOT-23 surface mount package using proprietary SuperSOTTM-3 design for superior thermal and electrical capabilities
x High performance trench technology for extremely low RDS(ON)
D
D
S
SuperSOT TM-3
G
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS VGSS ID
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current.
- Continuous.
FDN361BN Datasheet
