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FDP030N06B_F102 Datasheet MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FDP030N06B_F102 — N-Channel PowerTrench® MOSFET FDP030N06B_F102 N-Channel PowerTrench® MOSFET 60 V, 195 A, 3.

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

Applications • Synchronous Rectification for ATX / Server / Tele PSU • Battery Protection Circuit • Motor Drives and Uninterruptible Power Supplies • Renewable System D GDS TO-220 G S Absolute Maximum Ratings TC = 25oC unless otherwise noted.

Symbol VDSS VGSS ID IDM EAS dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate

Key Features

  • RDS(on) = 2.67 mΩ (Typ. ) @ VGS = 10 V, ID = 100 A.
  • Low FOM RDS(on).
  • QG.
  • Low Reverse-Recovery Charge, Qrr = 78 nC.
  • Soft Reverse-Recovery Body Diode.
  • Enables High Efficiency in Synchronous Rectification.
  • Fast Switching Speed.
  • 100% UIL Tested.
  • RoHS Compliant.

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