Datasheet Details
| Part number | FDP047N10 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 789.12 KB |
| Description | N-Channel MOSFET |
| Datasheet | FDP047N10_FairchildSemiconductor.pdf |
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Overview: FDP047N10 — N-Channel PowerTrench® MOSFET FDP047N10 N-Channel PowerTrench® MOSFET 100 V, 164 A, 4.
| Part number | FDP047N10 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 789.12 KB |
| Description | N-Channel MOSFET |
| Datasheet | FDP047N10_FairchildSemiconductor.pdf |
|
|
|
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Applications • Synchronous Rectification for ATX / Server / Tele PSU • Battery Protection Circuit • Motor Drives and Uninterruptible Power Supplies • Micro Solar Inverter D GDS TO-220 G S MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol Parameter FDP047N10 VDSS VGSS ID Drain to Source Voltage Gate to Source Voltage Drain Current - - - Continuous Continuous Continuous (TC (TC (TC = = = 25oC, 100oC, 25oC, Silicon Limited) Silicon Limited) Package Limited) 100 ±20 164* 116* 120 IDM EAS dv/dt PD Drain Current - Pulsed Single Pulsed Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate Above 25oC (Note 1) (Note 2) (Note 3) 656* 1153 6.0 375 2.5 TJ, TSTG TL Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds -55 to +175 300 *Calculated continuous current based on maximum allowable junction temperature.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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FDP047N10 | N-Channel MOSFET | INCHANGE |
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