| Part Number | FDP047N10 Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor
FDP047N10
·FEATURES ·With TO-220 packaging ·Drain Source Voltage-
: VDSS ≥ 100V ·Static drain-source on-resistance:
RDS(on) ≤ 4.7mΩ@VGS=10V ·100% avalanche tested ·Mi.
*With TO-220 packaging *Drain Source Voltage- : VDSS ≥ 100V *Static drain-source on-resistance: RDS(on) ≤ 4.7mΩ@VGS=10V *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *APPLICATIONS *Power supply *Switching applications *ABSOLUTE MAXIMUM R. |
FDP047N10 Datasheet and Specifications PDF
The FDP047N10 is a N-Channel MOSFET.
| Part Number | FDP047N10 Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Fairchild Semiconductor |
| Overview |
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performa.
* RDS(on) = 3.9 mΩ (Typ.) @ VGS = 10 V, ID = 75 A * Fast Switching Speed * Low Gate Charge * High Performance Trench Technology for Extremely Low RDS(on) * High Power and Current Handling Capability * RoHS Compliant Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advan. |