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FDP075N15A Datasheet N-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FDP075N15A / FDB075N15A — N-Channel PowerTrench® MOSFET March 2015 FDP075N15A / FDB075N15A N-Channel PowerTrench® MOSFET 150 V, 130 A, 7.

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

Applications • Synchronous Rectification for ATX / Server / Tele PSU • Battery Protection Circuit • Motor Drives and Uninterruptible Power Supplies • Micro Solar Inverter D D GDS TO-220 G S D2-PAK G S MOSFET Maximum Ratings TC = 25oC unless otherwise noted.

Symbol Parameter VDSS VGSS ID IDM EAS dv/dt PD Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation - DC - AC - Continuous (TC = 25oC) - Continuous (TC = 100oC) - Pulsed (TC = 25oC) - Derate Above 25oC (f > 1 Hz) (Note 1) (Note 2) (Note 3) TJ, TSTG TL Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds * Package limitation current is 120 A.

Key Features

  • RDS(on) = 6.25 m (Typ. ) @ VGS = 10 V, ID = 100 A.
  • Fast Switching.
  • Low Gate Charge.
  • High Performance Trench Technology for Extremely Low RDS(on).
  • High Power and Current Handling Capability.
  • RoHS Compliant.

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