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FDP075N15A - N-Channel MOSFET

General Description

This N Channel MOSFET is produced using onsemi advanced POWERTRENCH process that has been tailored to minimize the on

state resistance while maintaining superior switching performance.

Key Features

  • RDS(on) = 6.25 mW (Typ. ) @ VGS = 10 V, ID = 100 A.
  • Fast Switching.
  • Low Gate Charge.
  • High Performance Trench Technology for Extremely Low RDS(on).
  • High Power and Current Handling Capability.
  • RoHS Compliant.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – N-Channel, POWERTRENCH) 150 V, 130 A, 7.5 mW FDP075N15A, FDB075N15A Description This N−Channel MOSFET is produced using onsemi advanced POWERTRENCH process that has been tailored to minimize the on−state resistance while maintaining superior switching performance. Features • RDS(on) = 6.25 mW (Typ.) @ VGS = 10 V, ID = 100 A • Fast Switching • Low Gate Charge • High Performance Trench Technology for Extremely Low RDS(on) • High Power and Current Handling Capability • RoHS Compliant Applications • Synchronous Rectification for ATX / Server / Telecom PSU • Battery Protection Circuit • Motor Drives and Uninterruptible Power Supplies • Micro Solar Inverter DATA SHEET www.onsemi.com VDSS RDS(ON) MAX 150 V 7.5 mW @ 10 V *Package limitation current is 120 A.