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FDP15N50 - N-Channel MOSFET

Key Features

  • Low Gate Charge Requirement Qg results in Simple Drive.
  • Improved Gate, Avalanche and High Reapplied dv/dt Ruggedness.
  • Reduced rDS(ON).
  • Reduced Miller Capacitance and Low Input Capacitance.
  • Improved Switching Speed with Low EMI.
  • 175°C Rated Junction Temperature Package SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) DRAIN (FLANGE) SOURCE DRAIN GATE Symbol D G S TO-263AB DRAIN (BOTTOM) FDB SERIES TO-247 FDH SERIES TO-220AB FDP SERIES Abso.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDH15N50 / FDP15N50 / FDB15N50 August 2003 FDH15N50 / FDP15N50 / FDB15N50 15A, 500V, 0.