FDP20N40 Datasheet | Fairchild Semiconductor

Features - Low Gate Charge Requirement Qg results in Simple Drive - Improved Gate, Avalanche and High Reapplied dv/dt Ruggedness - Reduced r DS(ON) - Reduced Miller Capacitance and Low Input Capacitance - Improved Switching Speed with Low EMI - 175°C Rated Junction Temperature Package JEDEC TO-247 SOURCE DRAIN GATE Symbol JEDEC TO-220AB SOURCE DRAIN GATE G DRAIN (FLANGE) DRAIN (FLANGE) Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current ID Continuous (TC = 25o C, VGS = 10V) Continuous (TC = Pulsed (Note 1) PD TJ, TSTG Power dissipation Derate above 25o C Operating and Storage Temperature Soldering Temperature for 10 seconds Mounting Torque, 8-32 or M3 Screw 100o C, VGS = 10V) 20 14 80 273 1.82 -55 to 175 300 (1.6mm from case) 10ibf- in (1.1N- m) A A A W W/o C o o Ratings 400 ±30 Units V V Thermal Characteristics RθJC Rθ CS Rθ JA Rθ JA Thermal Resistance Junction to Case Thermal Resistance Case to Sink, Flat, Greased Surface Thermal Resistance Junction to Ambient (TO-247) Thermal Resistance Junction to Ambient (TO-220) 0.55 0.24 40 62 o C/W C/W C/W o C/W o o ©2002 Fairchild Semiconductor Corporation FDH20N40 / FDP20N40 Rev. A, FDH20N40 / FDP20N40 Package Marking and Ordering Information Device Marking FDH20N40 FDP20N40 Device FDH20N40 FDP20N40 Package TO-247 TO-220 Reel Size Tube Tube Tape Width Quantity 30 50 Electrical Characteristics TC = 25°C (unless otherwise noted) Symbol Parameter Test Conditions Min Typ Max Units Statics BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V V/°C Reference to 25°C ID = 1m A VGS = 10V, ID = 10A VDS = VGS, ID = 250µA VDS = 400V VGS = 0V VGS = ±20V TC = 25o C TC =150o C 400 2.0 0.43 0.200 3.5 0.216 4.0 25 250 ±100 Ω V µA n A V ∆BVDSS/∆TJ Breakdown Voltage Temp. Coefficient r DS(ON) VGS(th) IDSS IGSS Drain to Source On-Resistance Gate Threshold Voltage Zero Gate Voltage Drain Current Gate to Source Leakage...