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FDP24AN06LA0 - N-Channel MOSFET

Key Features

  • r DS(ON) = 20mΩ (Typ. ), VGS = 5V, ID = 36A.
  • Qg(tot) = 16nC (Typ. ), VGS = 5V.
  • Low Miller Charge.
  • Low QRR Body Diode.
  • UIS Capability (Single Pulse and Repetitive Pulse).
  • Qualified to AEC Q101 Formerly developmental type 83547.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDB24AN06LA0 / FDP24AN06LA0 www.DataSheet4U.com January 2004 FDB24AN06LA0 / FDP24AN06LA0 N-Channel PowerTrench® MOSFET 60V, 36A, 24mΩ Features • r DS(ON) = 20mΩ (Typ.), VGS = 5V, ID = 36A • Qg(tot) = 16nC (Typ.