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FDP24N40 - N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Key Features

  • RDS(on) = 0.140Ω ( Typ. )@ VGS = 10V, ID = 12A.
  • Low gate charge ( Typ. 46nC).
  • Low Crss ( Typ. 25pF).
  • Fast switching.
  • 100% avalanche tested.
  • Improve dv/dt capability.
  • RoHS compliant UniFETTM.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDP24N40 / FDPF24N40 N-Channel MOSFET www.DataSheet4U.com December 2007 FDP24N40 / FDPF24N40 N-Channel MOSFET 400V, 24A, 0.175Ω Features • RDS(on) = 0.140Ω ( Typ.)@ VGS = 10V, ID = 12A • Low gate charge ( Typ. 46nC) • Low Crss ( Typ. 25pF) • Fast switching • 100% avalanche tested • Improve dv/dt capability • RoHS compliant UniFETTM Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.