FDP2614 Description
This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. , Junction-to-Ambient, Max. ©2007 Fairchild Semiconductor Corporation 1 FDP2614 Rev.
FDP2614 Key Features
- RDS(on) = 22.9 mΩ ( Typ.)@ VGS = 10 V, ID = 31 A
- Fast Switching Speed
- Low Gate Charge
- High Performance Trench technology for Extremely Low
- High Power and Current Handing Capability
- RoHS pliant