FDP2710 Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. , Junction-to-Ambient, Max. C1 Unit V V A A A mJ V/ns W W/°C °C °C Unit °C/W °C/W .fairchildsemi.
FDP2710 Key Features
- RDS(on) = 36.3 mΩ ( Typ.)@ VGS = 10 V, ID = 25 A
- Fast Switching Speed
- Low Gate Charge
- High Performance Trench technology for Extremely Low
- High Power and Current Handing Capability
- RoHS pliant