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FDP2710 Datasheet 250v N-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FDP2710 — N-Channel PowerTrench® MOSFET October 2013 FDP2710 N-Channel PowerTrench® MOSFET 250 V, 50 A, 42.

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

Applications • Consumer Appliances • Synchronous Rectification D GDS TO-220 Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDS VGS ID IDM EAS dv/dt PD TJ, TSTG TL Drain-Source Voltage Gate-Source voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed (Note 1) Single Pulsed Avalanche Energy (Note 2) Peak Diode Recovery dv/dt (Note 3) Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction-to-Case, Max.

Thermal Resistance, Junction-to-Ambient, Max.

Key Features

  • RDS(on) = 36.3 mΩ ( Typ. )@ VGS = 10 V, ID = 25 A.
  • Fast Switching Speed.
  • Low Gate Charge.
  • High Performance Trench technology for Extremely Low RDS(on).
  • High Power and Current Handing Capability.
  • RoHS Compliant General.

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