FDP2710-F085 Datasheet | onsemi

FDP2710-F085 N-Channel PowerTrench® MOSFET N-Channel PowerTrench® MOSFET 250V, 50A, 47mΩ General Description Features - Typ rDS(on) = 38mΩ at VGS = 10V, ID = 50A - Typ Qg(TOT) = 78nC at VGS = 10V - Fast switching speed - Low gate charge - High performance trench technology for extremely low RDS(on) This N-Channel MOSFET is produced using ON Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Applications - PDP application - Hybrid Electric Vehicle DC/DC converters - High power and current handling capability - Qualified to AEC Q101 - RoHS pliant ©2010...