FDP2710-F085 Description
Features Typ rDS(on) = 38mΩ at VGS = 10V, ID = 50A Typ Qg(TOT) = 78nC at VGS = 10V Fast switching speed Low gate charge High performance trench technology for extremely low RDS(on) This N-Channel MOSFET is produced using ON Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Applications PDP...
FDP2710-F085 Key Features
- Typ rDS(on) = 38mΩ at VGS = 10V, ID = 50A
- Typ Qg(TOT) = 78nC at VGS = 10V
- Fast switching speed
- Low gate charge
- High performance trench technology for extremely low RDS(on)