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FDP2710-F085 - N-Channel MOSFET

Key Features

  • Typ rDS(on) = 38mΩ at VGS = 10V, ID = 50A.
  • Typ Qg(TOT) = 78nC at VGS = 10V.
  • Fast switching speed.
  • Low gate charge.
  • High performance trench technology for extremely low RDS(on) This N-Channel MOSFET is produced using ON Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

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FDP2710-F085 N-Channel PowerTrench® MOSFET FDP2710-F085 N-Channel PowerTrench® MOSFET 250V, 50A, 47mΩ General Description Features „ Typ rDS(on) = 38mΩ at VGS = 10V, ID = 50A „ Typ Qg(TOT) = 78nC at VGS = 10V „ Fast switching speed „ Low gate charge „ High performance trench technology for extremely low RDS(on) This N-Channel MOSFET is produced using ON Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Applications „ PDP application „ Hybrid Electric Vehicle DC/DC converters „ High power and current handling capability „ Qualified to AEC Q101 „ RoHS Compliant ©2010 Semiconductor Components Industries, LLC. 1 September-2017, Rev.