Datasheet Summary
- N-Channel PowerTrench® MOSFET
November 2013
N-Channel PowerTrench® MOSFET
105 V, 41 A, 33 mΩ
Features
- RDS(on) = 25 mΩ ( Typ.) @ VGS = 10 V, ID = 41 A
- QG(tot) = 28 nC ( Typ.) @ VGS = 10 V
- Low Miller Charge
- Low Qrr Body Diode
- Optimized Efficiency at High Frequencies
- UIS Capability (Single Pulse and Repetitive Pulse)
Applications
- Consumer Appliances
- Synchronous Rectification
- Battery Protection Circuit
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
Formerly developmental type 82760
TO-220
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS VGS
Drain to Source Voltage
Gate to Source...
