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March 1998
FDP4030L / FDB4030L N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
Features
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as DC/DC converters and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
20
A,
30
V.
RDS(ON) = 0.035 Ω RDS(ON) = 0.055
@ Ω
VGS=10 V @ VGS=4.5V.
Critical DC electrical parameters specified at elevated temperature.
FDP4030L Datasheet
