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FDP020N06B Datasheet N-channel Powertrench MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FDP020N06B — N-Channel PowerTrench® MOSFET FDP020N06B N-Channel PowerTrench® MOSFET 60 V, 313 A, 2 mΩ November.

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

Applications • Synchronous Rectification for ATX / Server / Tele PSU • Battery Protection Circuit • Motor Drives and Uninterruptible Power Supplies • Renewable System D GDS TO-220 G S Absolute Maximum Ratings TC = 25oC unless otherwise noteed.

Symbol Parameter VDSS VGSS ID IDM EAS dv/dt PD Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current - Continuous (TC = 25oC, Silicon Limited) - Continuous (TC = 100oC, Silicon Limited) - Continuous (TC = 25oC, Package Limited) - Pulsed (Note 1) Single Pulsed Avalanche Energy (Note 2) Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate Above 25oC (Note 3) TJ, TSTG TL Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds FDP020N06B_F102 60 ±20 313* 221* 120 1252 1859 6.0 333 2.2 -55 to +175 300 * Package limitation current is 120A.

Key Features

  • RDS(on) = 1.65 mΩ ( Typ. ) @ VGS = 10 V, ID = 100 A.
  • Low FOM RDS(on).
  • QG.
  • Low Reverse-Recovery Charge, Qrr = 194 nC.
  • Soft Reverse-Recovery Body Diode.
  • Enables High Efficiency in Synchronous Rectification.
  • Fast Switching Speed.
  • 100% UIL Tested.
  • RoHS Compliant.

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FDP020N06B Distributor