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FDP5800 — N-Channel Logic Level PowerTrench® MOSFET
December 2013
FDP5800
N-Channel Logic Level PowerTrench® MOSFET
60 V, 80 A, 6 mΩ
Features
• RDS(on) = 4.6 mΩ (Typ.) @ VGS = 10 V, ID = 80 A • High Performance Trench Technology for Extermly Low
RDS(on) • Low Gate Charge • High Power and Current Handing Capability • RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Applications
• Power Tools • Motor Drives and Uninterruptible Power Supplies • Synchronous Rectification • Battery Protection Circuit
D
GDS
TO-220
G
S
MOSFET Maximum Ratings TC = 25°C unless otherwise noted.