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FDP5800 - N-Channel MOSFET

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

Power Tools Motor Drives and Uninterruptible Power Supplies

Key Features

  • RDS(on) = 4.6 mΩ (Typ. ) @ VGS = 10 V, ID = 80 A.
  • High Performance Trench Technology for Extermly Low RDS(on).
  • Low Gate Charge.
  • High Power and Current Handing Capability.
  • RoHS Compliant.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDP5800 — N-Channel Logic Level PowerTrench® MOSFET December 2013 FDP5800 N-Channel Logic Level PowerTrench® MOSFET 60 V, 80 A, 6 mΩ Features • RDS(on) = 4.6 mΩ (Typ.) @ VGS = 10 V, ID = 80 A • High Performance Trench Technology for Extermly Low RDS(on) • Low Gate Charge • High Power and Current Handing Capability • RoHS Compliant Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. Applications • Power Tools • Motor Drives and Uninterruptible Power Supplies • Synchronous Rectification • Battery Protection Circuit D GDS TO-220 G S MOSFET Maximum Ratings TC = 25°C unless otherwise noted.