FDP5800 Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. Applications Power Tools Motor Drives and Uninterruptible Power Supplies Synchronous Rectification Battery Protection Circuit D GDS TO-220 G S MOSFET Maximum Ratings TC = 25°C unless otherwise noted. Symbol...
FDP5800 Key Features
- RDS(on) = 4.6 mΩ (Typ.) @ VGS = 10 V, ID = 80 A
- High Performance Trench Technology for Extermly Low
- Low Gate Charge
- High Power and Current Handing Capability
- RoHS pliant