FDP6030L Datasheet | Fairchild Semiconductor

Description This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with parable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Features - 48 A, 30 V RDS(ON) = 13 mΩ @ VGS = 10 V RDS(ON) = 17 mΩ @ VGS = 4.5 V - Critical DC electrical parameters specified at elevated temperature - High performance trench technology for extremely low RDS(ON) - 175°C maximum junction temperature rating TO-220 FDP Series TO-263AB FDB Series Absolute Maximum Ratings TA=25o C unless otherwise noted Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous (Note 1) - Pulsed Total Power Dissipation @ TC = 25°C Derate above 25°C TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics RθJC Thermal Resistance, Junction-to-Case RθJA Thermal Resistance, Junction-to-Ambient Package Marking and Ordering Information Device...