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FDP6030BL - N-Channel MOSFET

Datasheet Summary

Description

40 A, 30 V.

RDS(ON) = 0.018 Ω @ VGS = 10 V RDS(ON) = 0.024 Ω @ VGS = 4.5 V.

This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

Critical DC el

Features

  • General.

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Datasheet Details

Part number FDP6030BL
Manufacturer ON Semiconductor
File Size 255.41 KB
Description N-Channel MOSFET
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FDP6030BL/FDB6030BL FDP6030BL/FDB6030BL N-Channel Logic Level PowerTrench MOSFET Features General Description • 40 A, 30 V. RDS(ON) = 0.018 Ω @ VGS = 10 V RDS(ON) = 0.024 Ω @ VGS = 4.5 V. This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • Critical DC electrical parameters specified at elevated temperature. • Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(on) specifications resulting in DC/DC power supply designs with higher overall efficiency.
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