FDP6030BL Datasheet | onsemi

Features General Description - 40 A, 30 V. RDS(ON) = 0.018 Ω @ VGS = 10 V RDS(ON) = 0.024 Ω @ VGS = 4.5 V. This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. - Critical DC electrical parameters specified at elevated temperature. - Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with parable RDS(on) specifications resulting in DC/DC power supply designs with higher overall efficiency. - High performance trench technology for extremely low RDS(ON). - 175°C maximum junction temperature rating. TO-220 FDP Series TO-263AB FDB Series Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FDP6030BL FDB6030BL Units VDSS Drain-Source Voltage VGSS Gate-Source Voltage Maximum Drain Current - Continuous (Note 1) - Pulsed Total Power Dissipation @ TC = 25°C Derate above 25°C TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics RθJC Thermal Resistance, Junction-to-Case RθJA Thermal Resistance, Junction-to-Ambient 30 ±20 40 120 60 0.36 -65 to...