Datasheet Details
| Part number | FDP8447L |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 210.21 KB |
| Description | N-Channel MOSFET |
| Datasheet | FDP8447L_FairchildSemiconductor.pdf |
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Overview: FDP8447L N-Channel PowerTrench® MOSFET FDP8447L N-Channel PowerTrench® MOSFET 40V, 50A, 8.
| Part number | FDP8447L |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 210.21 KB |
| Description | N-Channel MOSFET |
| Datasheet | FDP8447L_FairchildSemiconductor.pdf |
|
|
|
Max rDS(on) = 8.7mΩ at VGS = 10V, ID = 14A Max rDS(on) = 11.2mΩ at VGS = 4.5V, ID = 11A Fast Switching This N-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench technology to deliver low rDS(on) and optimized BVDSS capability to offer superior performance benefit in the application.
RoHS pliant Applications Inverter Power Supplies D GD S TO-220 FDP Series G S MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) -Continuous (Silicon limited) -Continuous -Pulsed TC = 25°C TC = 25°C TA = 25°C Drain-Source Avalanche Energy Power Dissipation TC = 25°C Power Dissipation TA = 25°C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 1) (Note 3) (Note 1) Ratings 40 ±20 50 65 12 100 153 60 2 -55 to +150 Units V V A mJ W °C RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information 2.1 (Note 1) 62.5 °C/W Device Marking FDP8447L Device FDP8447L Package TO-220AB Reel Size Tube Tape Width N/A Quantity 50units ©2007 Fairchild Semiconductor Corporation 1 FDP8447L Rev.B .fairchildsemi.
FDP8447L N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250µA, VGS = 0V 40 V ID = 250µA, referenced to 25°C 34 mV/°C VDS = 32V, VGS = ±20V, VDS = 0V 1 µA ±100 nA On Characteristics VGS(th) ∆VGS(th) ∆TJ Gate to Source Threshold Voltage
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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FDP8447L | N-Channel MOSFET | INCHANGE |
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