Datasheet4U Logo Datasheet4U.com

FDP8447L - N-Channel MOSFET

Datasheet Summary

Features

  • With TO-220 packaging.
  • Drain Source Voltage- : VDSS ≥ 40V.
  • Static drain-source on-resistance: RDS(on) ≤ 8.7mΩ@VGS=10V.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

Datasheet preview – FDP8447L

Datasheet Details

Part number FDP8447L
Manufacturer INCHANGE
File Size 278.83 KB
Description N-Channel MOSFET
Datasheet download datasheet FDP8447L Datasheet
Additional preview pages of the FDP8447L datasheet.

📁 Similar Datasheet

  • FDP8447L - N-Channel MOSFET (Fairchild Semiconductor)
  • FDP8440 - N-Channel MOSFET (Fairchild Semiconductor)
  • FDP8441 - N-Channel MOSFET (Fairchild Semiconductor)
  • FDP8442 - N-Channel MOSFET (Fairchild Semiconductor)
  • FDP8442-F085 - N-Channel MOSFET (ON Semiconductor)
  • FDP8442_F085 - MOSFET (Fairchild Semiconductor)
  • FDP8443 - N-Channel MOSFET (Fairchild Semiconductor)
  • FDP8443-F085 - N-Channel MOSFET (ON Semiconductor)
  • FDP8443_F085 - N-Channel MOSFET (Fairchild Semiconductor)
  • FDP8030L - N-Channel MOSFET (Fairchild Semiconductor)
Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text
isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220 packaging ·Drain Source Voltage- : VDSS ≥ 40V ·Static drain-source on-resistance: RDS(on) ≤ 8.7mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 40 V VGSS Gate-Source Voltage ±20 V ID Drain Current-Continuous;@Tc=25℃ 50 A PD Total Dissipation 60 W Tj Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX UNIT 2.1 ℃/W FDP8447L isc website：www.iscsemi.
Published: |