FDP8N50NZF
Features
- RDS(on) = 0.85Ω ( Typ.) @ VGS = 10V, ID = 3.25A
- Low Gate Charge ( Typ. 14n C)
- Low Crss ( Typ. 5p F)
- Fast Switching
- 100% Avalanche Tested
- Improve dv/dt Capability
- ESD Improved Capability
- Ro HS pliant
Description
This N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor correction.
TO-220 FDP Series o
TO-220F FDPF Series (potted)
MOSFET Maximum Ratings TC = 25 C unless otherwise noted
Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Avalanche...
