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FDP8N50NZU - N-Channel MOSFET

General Description

This N-Channel enhancement mode power field effect transistors are prod uced using F airchild's pro prietary, planar str ipe, DMOS technology.

Key Features

  • RDS(on) = 1.0 ( Typ. ) @ VGS = 10V, ID = 3.25A.
  • Low Gate Charge ( Typ. 14nC).
  • Low Crss ( Typ. 5pF).
  • Fast Switching.
  • 100% Avalanche Tested.
  • Improve dv/dt Capability.
  • ESD Improved Capability.
  • RoHS Compliant.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDP8N50NZU / FDPF8N50NZU N-Channel MOSFET FDP8N50NZU / FDPF8N50NZU N-Channel MOSFET 500V, 6.5A, 1.2 February 2010 UniFET-IITM tm Features • RDS(on) = 1.0 ( Typ.) @ VGS = 10V, ID = 3.25A • Low Gate Charge ( Typ. 14nC) • Low Crss ( Typ. 5pF) • Fast Switching • 100% Avalanche Tested • Improve dv/dt Capability • ESD Improved Capability • RoHS Compliant Description This N-Channel enhancement mode power field effect transistors are prod uced using F airchild's pro prietary, planar str ipe, DMOS technology. This advance t echnology ha s been especially t ailored to minimize on-st ate r esistance, provide super ior switchin g performance, and withst and high energy pulse in the avalanch e and commutation mode.