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FDP80N06 - N-Channel MOSFET

Datasheet Summary

Description

UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology.

This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength.

Features

  • RDS(on) = 8.5 mΩ (Typ. ) @ VGS = 10 V, ID = 40 A.
  • Low Gate Charge (Typ. 57nC).
  • Low Crss (Typ. 145pF).
  • Fast Switching.
  • Improved dv/dt Capability.
  • RoHS Compliant November 2013.

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Datasheet Details

Part number FDP80N06
Manufacturer Fairchild Semiconductor
File Size 910.50 KB
Description N-Channel MOSFET
Datasheet download datasheet FDP80N06 Datasheet
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FDP80N06 — N-Channel UniFETTM MOSFET FDP80N06 N-Channel UniFETTM MOSFET 60 V, 80 A, 10 mΩ Features • RDS(on) = 8.5 mΩ (Typ.) @ VGS = 10 V, ID = 40 A • Low Gate Charge (Typ. 57nC) • Low Crss (Typ. 145pF) • Fast Switching • Improved dv/dt Capability • RoHS Compliant November 2013 Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
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