FDP8N60ZU Datasheet PDF (N-Channel MOSFET) | Download Fairchild Semiconductor FDP8N60ZU

FDP8N60ZU - N-Channel MOSFET

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

RDS(on) = 1.15mΩ ( Typ. ) @ VGS = 10V, ID = 3.25A.
Low gate charge ( Typ. 20nC).
Low Crss ( Typ. 10pF).
Fast switching.
100% avalanche tested.
Improved dv/dt capability.
RoHS compliant.

Datasheet Details

Part number	FDP8N60ZU
Manufacturer	Fairchild Semiconductor
File Size	606.73 KB
Description	N-Channel MOSFET
Datasheet	FDP8N60ZU Datasheet
Additional preview pages of the FDP8N60ZU datasheet.

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Full PDF Text Transcription

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FDP8N60ZU / FDPF8N60ZUT N-Channel MOSFET April 2009 UniFETTM FDP8N60ZU / FDPF8N60ZUT N-Channel MOSFET, FRFET 600V, 6.5A, 1.35Ω Features • RDS(on) = 1.15mΩ ( Typ.) @ VGS = 10V, ID = 3.25A • Low gate charge ( Typ. 20nC) • Low Crss ( Typ. 10pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compliant Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.

Published: Apr 22, 2014 |