Datasheet4U Logo Datasheet4U.com

FDPC8014S - MOSFET

General Description

Q1: N-Channel Max rDS(on) = 3.8 mΩ at VGS = 10 V, ID = 20 A Max rDS(on) = 4.7 mΩ at VGS = 4.5 V, ID = 18 A Q2: N-Channel Max rDS(on) = 1.2 mΩ at VGS = 10 V, ID = 41 A Max rDS(on) = 1.4 mΩ at VGS = 4.5 V, ID = 37 A Low inductance packaging shortens r

Key Features

  • General.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FDPC8014AS Dual N-Channel MOSFET ON Semiconductor
FDPC8016S Dual N-Channel MOSFET ON Semiconductor
FDPC4044 N-Channel MOSFET ON Semiconductor
FDPC5018SG Dual N-Channel MOSFET ON Semiconductor
FDPC5030SG Dual N-Channel MOSFET ON Semiconductor

Other Datasheets by Fairchild (now onsemi)

Part Number Description
FDPC8011S MOSFET
FDPC8012S MOSFET
FDPC8013S MOSFET
FDPC8016S MOSFET
FDPC4044 MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FDPC8014S PowerTrench® Power Clip April 2014 FDPC8014S PowerTrench® Power Clip 25V Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel „ Max rDS(on) = 3.8 mΩ at VGS = 10 V, ID = 20 A „ Max rDS(on) = 4.7 mΩ at VGS = 4.5 V, ID = 18 A Q2: N-Channel „ Max rDS(on) = 1.2 mΩ at VGS = 10 V, ID = 41 A „ Max rDS(on) = 1.4 mΩ at VGS = 4.5 V, ID = 37 A „ Low inductance packaging shortens rise/fall times, resulting in lower switching losses „ MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing „ RoHS Compliant This device includes two specialized N-Channel MOSFETs in a dual package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters.