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FDPC8014AS Datasheet Dual N-channel MOSFET

Manufacturer: onsemi

Overview: MOSFET – Dual, N-Channel, POWERTRENCH), Power Clip, Asymmetric 25 V.

General Description

This device includes two specialized N−Channel MOSFETs in a dual package.

The switch node has been internally connected to enable easy placement and routing of synchronous buck converters.

The control MOSFET (Q1) and synchronous SyncFETt (Q2) have been designed to provide optimal power efficiency.

Key Features

  • Q1: N.
  • Channel.
  • Max rDS(on) = 3.8 mW at VGS = 10 V, ID = 20 A.
  • Max rDS(on) = 4.7 mW at VGS = 4.5 V, ID = 18 A.
  • Q2: N.
  • Channel.
  • Max rDS(on) = 1.0 mW at VGS = 10 V, ID = 40 A.
  • Max rDS(on) = 1.2 mW at VGS = 4.5 V, ID = 37 A.
  • Low Inductance Packaging Shortens Rise/Fall Times, Resulting in Lower Switching Losses.
  • MOSFET Integration Enables Optimum Layout for Lower Circuit Inductance and Reduced Switch Node Ringing.

Similar Datasheet

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