FDPC8014AS - Dual N-Channel MOSFET

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ON Semiconductor

Part number	FDPC8014AS
Manufacturer	ON Semiconductor
File Size	552.25 KB
Description	Dual N-Channel MOSFET
Datasheet	FDPC8014AS Datasheet
Additional preview pages of the FDPC8014AS datasheet.

This device includes two specialized N

dual package.

The switch node has been internally connected to enable easy placement and routing of synchronous buck converters.

Q1: N.
Channel.
Max rDS(on) = 3.8 mW at VGS = 10 V, ID = 20 A.
Max rDS(on) = 4.7 mW at VGS = 4.5 V, ID = 18 A.
Q2: N.
Channel.
Max rDS(on) = 1.0 mW at VGS = 10 V, ID = 40 A.
Max rDS(on) = 1.2 mW at VGS = 4.5 V, ID = 37 A.
Low Inductance Packaging Shortens Rise/Fall Times, Resulting in Lower Switching Losses.
MOSFET Integration Enables Optimum Layout for Lower Circuit Inductance and Reduced Switch Node Ringing.

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Published: Nov 30, 2024 |