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FDPF20N50 - N-Channel MOSFET

Download the FDPF20N50 datasheet PDF. This datasheet also covers the FDPF20N50T variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

UniFETTM MOSFET is F airchild Semiconductor ’s high volt age MOSFET family based on planar stripe and D MOS technology.

This MOSFET is tailored to reduce on-st ate resistance, and to provide be tter switching performance and higher avalanche energy strengt h.

Key Features

  • RDS(on) = 200 mΩ (Typ. ) @ VGS = 10 V, ID = 10 A.
  • Low Gate Charge (Typ. 45.6 nC).
  • Low Crss (Typ. 27 pF).
  • 100% Avalanche Tested.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (FDPF20N50T-FairchildSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
FDPF20N50 N-Channel MOSFET ON Semiconductor
FDPF20N50FT N-Channel MOSFET ON Semiconductor
FDPF20N50T N-Channel MOSFET ON Semiconductor
FDPF2710T N-Channel MOSFET ON Semiconductor
FDPF2D3N10C N-Channel MOSFET ON Semiconductor

Other Datasheets by Fairchild (now onsemi)

Part Number Description
FDPF20N50FT N-Channel MOSFET
FDPF20N50T N-Channel MOSFET
FDPF24N40 N-Channel MOSFET
FDPF26N40 N-Channel MOSFET
FDPF2710T MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FDP20N50 / FDPF20N50 / FDPF20N50T — N-Channel UniFETTM MOSFET November 2013 FDP20N50 / FDPF20N50 / FDPF20N50T N-Channel UniFETTM MOSFET 500 V, 20 A, 230 mΩ Features • RDS(on) = 200 mΩ (Typ.) @ VGS = 10 V, ID = 10 A • Low Gate Charge (Typ. 45.6 nC) • Low Crss (Typ. 27 pF) • 100% Avalanche Tested Description UniFETTM MOSFET is F airchild Semiconductor ’s high volt age MOSFET family based on planar stripe and D MOS technology. This MOSFET is tailored to reduce on-st ate resistance, and to provide be tter switching performance and higher avalanche energy strengt h. This device family is suit able for switching power convert er applicatio ns such as power factor corr ection (PFC), flat p anel display (FPD) T V pow er, ATX and electronic lamp ballasts.