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FDPF20N50T - N-Channel MOSFET

Download the FDPF20N50T datasheet PDF. This datasheet also covers the FDP20N50 variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

based on planar stripe and DMOS technology.

state resistance, and to provide better switching performance and higher avalanche energy strength.

Key Features

  • RDS(on) = 200 mW (Typ. ) @ VGS = 10 V, ID = 10 A.
  • Low Gate Charge (Typ. 45.6 nC).
  • Low Crss (Typ. 27 pF).
  • 100% Avalanche Tested.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (FDP20N50-ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOSFET – N-Channel, UniFETE 500 V, 20 A, 230 mW FDP20N50 / FDPF20N50  / FDPF20N50T Description UniFETt MOSFET is onsemi’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on−state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. Features • RDS(on) = 200 mW (Typ.) @ VGS = 10 V, ID = 10 A • Low Gate Charge (Typ. 45.6 nC) • Low Crss (Typ. 27 pF) • 100% Avalanche Tested Applications • LCD/LED/PDP TV • Lighting • Uninterruptible Power Supply • AC−DC Power Supply DATA SHEET www.onsemi.