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FDPF20N50T - N-Channel MOSFET

General Description

UniFETTM MOSFET is F airchild Semiconductor ’s high volt age MOSFET family based on planar stripe and D MOS technology.

This MOSFET is tailored to reduce on-st ate resistance, and to provide be tter switching performance and higher avalanche energy strengt h.

Key Features

  • RDS(on) = 200 mΩ (Typ. ) @ VGS = 10 V, ID = 10 A.
  • Low Gate Charge (Typ. 45.6 nC).
  • Low Crss (Typ. 27 pF).
  • 100% Avalanche Tested.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDP20N50 / FDPF20N50 / FDPF20N50T — N-Channel UniFETTM MOSFET November 2013 FDP20N50 / FDPF20N50 / FDPF20N50T N-Channel UniFETTM MOSFET 500 V, 20 A, 230 mΩ Features • RDS(on) = 200 mΩ (Typ.) @ VGS = 10 V, ID = 10 A • Low Gate Charge (Typ. 45.6 nC) • Low Crss (Typ. 27 pF) • 100% Avalanche Tested Description UniFETTM MOSFET is F airchild Semiconductor ’s high volt age MOSFET family based on planar stripe and D MOS technology. This MOSFET is tailored to reduce on-st ate resistance, and to provide be tter switching performance and higher avalanche energy strengt h. This device family is suit able for switching power convert er applicatio ns such as power factor corr ection (PFC), flat p anel display (FPD) T V pow er, ATX and electronic lamp ballasts.